Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6037742
Kind Code:
A
Abstract:
PURPOSE:To perfectly make flat a connecting aperture by covering a first Al wiring layer formed on a semiconductor substrate with an interlayer insulating film, providing an aperture, filling it with Sn having a lower melting point than that of Al, forming an alloy with Al through the heat processing, and depositing a second Al wiring layer connected to the first Al wiring through such alloy. CONSTITUTION:A first Al wiring layer 21 provided on a semiconductor substrate is covered with an interlayer insulating film 22, an aperture is formed in the specified region and an Sn layer 23 having a lower melting point than that of Al is deposited on the entire part including such aperture. The heat processing is carried out under the non-oxidation ambient, thereby the layer 23 located in the aperture and Al of layer 21 under such layer are alloyed and thereby an alloy layer 24 is generated in the entire part of aperture. Thereafter an extra layer 23 on the layer 22 is eliminated, a second Al wiring layer 25 is deposited at the entire surface including the flat film 22 and layer 24 and the wirings 22 and 25 are connected through the layer 24. Thereafter, the wiring 25 is covered with an insulation protection film 26 as in the case of ordinary method.
Inventors:
SHIMA SHIYOUHEI
Application Number:
JP14568883A
Publication Date:
February 27, 1985
Filing Date:
August 11, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/3205; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Noriyuki Noriyuki