PURPOSE: To prevent deterioration of breakdown voltage by employing a material having high free energy for producing oxide in the electrode.
CONSTITUTION: Pt is deposited by 200nm, as a lower electrode 3, on an Si substrate 4 and tantalum oxide is deposited, by 20-300nm, thereon followed by deposition of gold by 300nm as an upper electrode 1. A static opposing magnetron high frequency sputtering system is employed in the formation of the lower electrode 3 using Pt of 99.9% purity having diameter of 100 mm as a target, and in the deposition of tantalum oxide 2 using tantalum of 9.99% purity having diameter of 100m as a target. A resistor heating vacuum deposition system is employed in the deposition of gold for the upper electrode 1 with the deposition rate being controlled to a constant rate of 1nm/sec. This structure eliminates the abrupt deterioration of breakdown voltage in the vicinity of 450°C of a conventional tantalum oxide thin film capacitor with regard to the relationship between the heat treatment temperature and the breakdown voltage of a tantalum oxide thin film capacitor.
| JPH02232355 | FORMATION OF THIN FILM |
| WO/2018/128009 | FILM FORMING METHOD AND WINDING TYPE FILM FORMING DEVICE |
| WO/2014/074574 | FRICTION AND WEAR REDUCTION IN CRYOGENIC MECHANISMS AND OTHER SYSTEMS |
INAGAWA HIROMI
YAMANE MASAO
HORIKOSHI KAZUHIKO
