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Patent Searching and Data


Title:
PHOTOETCHING METHOD WITH ELECTRON BEAMS
Document Type and Number:
Japanese Patent JPS608843
Kind Code:
A
Abstract:

PURPOSE: To reduce irradiation amt., to improve roughening of a resist surface after exposure, to simplify processes, and to lower cost by forming a thin electric ally conductive film on a glass substrate, coating it with an electron beam resist, and executing exposure and development.

CONSTITUTION: A thin transparent conductive film 11 is formed on a glass substrate 10 by the vapor deposition, sputtering, or the like method, and a photoresist, such as electron beam resist 12, is formed on the film 11 in a proper film thickness by the spin coating method, and solvent is removed by baking. The glass substrate 10 is set to a substrate holder 14 and the electron beam resist 12 is irradiated with electron beams 13 in accordance with a ring band pattern. The resist 12 is developed immediately without removing the film 11 to form a ring band 12a. When the resist 12 is of a positive type, such as, PMMA, the parts irradiated with the beams 13 are dissolved off.


Inventors:
SUZUKI SHINICHI
SUEMITSU HISASHI
Application Number:
JP11607183A
Publication Date:
January 17, 1985
Filing Date:
June 29, 1983
Export Citation:
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Assignee:
PIONEER ELECTRONIC CORP
International Classes:
G03F7/20; C03C17/00; C03C17/23; G02B3/08; G03C5/00; G03C5/08; G03F7/00; G03F7/11; G03F7/26; (IPC1-7): G03C5/08; G02B3/08; G03C5/00; G03F7/00; G03F7/20
Attorney, Agent or Firm:
Hideo Takino