Title:
【発明の名称】化合物半導体電界効果トランジスタ
Document Type and Number:
Japanese Patent JP3129264
Kind Code:
B2
Abstract:
A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate region in such a way that they extend in the direction of channel current and contact with the gate electrode. This compound semiconductor field effect transistor is improved in breakdown voltage between drain and gate and yet retains the high-speed operability of transistor.
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Inventors:
Yasuo Ohno
Hiroyuki Takahashi
Kunihiro Kazuaki
Hiroyuki Takahashi
Kunihiro Kazuaki
Application Number:
JP33458597A
Publication Date:
January 29, 2001
Filing Date:
December 04, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/338; H01L21/761; H01L23/482; H01L29/10; H01L29/423; H01L29/812; (IPC1-7): H01L21/338; H01L29/812
Domestic Patent References:
| JP57106172A | ||||
| JP5752173A | ||||
| JP5489584A | ||||
| JP52147077A | ||||
| JP320047A | ||||
| JP63124568A | ||||
| JP8203930A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)