ETCHING PROCESS OF WAFER - MITSUBISHI MATERIALS CORP

Title:

ETCHING PROCESS OF WAFER

Document Type and Number:

Japanese Patent JPH0645314

Kind Code:

A

Abstract:

PURPOSE: To disperse reaction heat generated by chemical reaction and maintain flatness with a small circulation amount of solution by sequentially dipping wafers into the etchant with which the two or more etching tanks for the etching of wafers are filled.

CONSTITUTION: Wafers are sequentially dipped into the etchant with which two or more etching tanks 3, 4 for the etching of wafers are filled. In this case, two or more etching tanks 3, 4 are sorted into two kinds of tanks, and the one 3 is filled with the etchant having the diffusion controlled type chemical composition, while the other 4 is filled with the etchant having the stirring controlled type chemical composition. It is desirable that wafers are dipped first into the etching tank 3 filled with the etchant having the diffusion controlled type chemical composition and thereafter the wafers are dipped into the etching tank 4 filled with the etchant having the stirring controlled type chemical composition.

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Inventors:

INOUE FUMIO
OBA SHIGEO
TAKAISHI KAZUNARI
OKADA TADASHI
SHIMIZU SATOSHI

Application Number:

JP6640892A

Publication Date:

February 18, 1994

Filing Date:

March 24, 1992

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP
MITSUBISHI MATERIAL SILICON

International Classes:

H01L21/306; H01L21/308; (IPC1-7): H01L21/306; H01L21/308

Attorney, Agent or Firm:

Masatake Shiga (2 outside)

Next Patent: SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELEMENT