PURPOSE: To provide a fine pattern having good shape by causing a relaxation reagent as an organic solvent to penetrate a resist film before the diffusion of a sililated molecule, and selectively relaxing a giant molecule in a resist.
CONSTITUTION: A far infrared radiation is radiated on a resist film 4 formed on a processed substrate 5 via a mask 2, thereby bridging an exposure sections 3. Thereafter, the substrate 5 is immersed in liquid containing a polymeric organic solvent 4 as a relaxation reagent, and before the diffusion of a sililated molecule in the film 4, the relaxation reagent is selectively made to penetrate an non-exposure section not bridged and the polymeric chain of the resist is thereby relaxed. As a result, the molecule of a sililating reagent in a relaxed zone 6 comes to have a larger diffusion constant and the zone 6 is thus selectively sililated, thereby forming a sililated layer 7. Also, this resist film 4 is developed by using a plasma 8 and the selectivity of sililation between exposed and un-exposed sections is thereby improved. In addition, even an optical image of low contract can be resolved, and a fine pattern can be formed to good shape.
FUKUDA HIROSHI
GOTO YASUSHI
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