Title:
SEMICONDUCTOR ELEMENT WITH GUARD RING
Document Type and Number:
Japanese Patent JPS5928390
Kind Code:
A
Abstract:
PURPOSE:To obtain an element available for high temperature acceleration life test by a method wherein an inclined junction of the impurity concentration gradient (a) having a fixed relation therewith is provided in a semiconductor layer of an impurity concentration NB and forbidden band width Eg and thus designated as a guard ring. CONSTITUTION:The breakdown voltage of the guard ring 1 for an avalanche diode is VBGR and that of an operating region (one side stepwise junction) 2 is VB. When the difference of temperature coefficients of both regions is DELTAbeta, the equation VBGR>=VB holds effective at 200 deg.C in case of VBGR>=(1+200DELTAbeta) VB at a room temperature, which shows the effect of a guard ring sufficiently. On the other hand, the equation VBGR 60 (Eg/1.1)<6/5>(a/3X10<20>)<-2/5>, VB 60 (Eg/ 1.1)<3/2>(NB/10<16>)<-3/4> hold effective as known, therefore the equation a<=(1.9X10<-10>) (Eg/1.1)<-3/4>X(Eg)<15/8> is obtained. By this constitution, when the gradient of the impurity concentration of the inclined junction at the guard ring part is determined, deterioration is not at all obseved; accordingly lifetime measurement can be performed at high reliability.
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Inventors:
TASHIRO YOSHIHARU
NISHIDA KATSUHIKO
NISHIDA KATSUHIKO
Application Number:
JP13902582A
Publication Date:
February 15, 1984
Filing Date:
August 10, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/107; H01L29/868; H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JPS4982667U | 1974-07-17 | |||
| JPS53104190A | 1978-09-11 | |||
| JPS5054290A | 1975-05-13 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)