OHMIC ELECTRODE STRUCTURE

Title:

OHMIC ELECTRODE STRUCTURE

Document Type and Number:

Japanese Patent JPH06104423

Kind Code:

A

Abstract:

PURPOSE: To provide ohmic electrode structure capable of having low and stable contact resistance against high-temperature heat treatment, capable of facilitating composition control, and excellent workability.

CONSTITUTION: An InxGa1-xAs layer (0<x≤1) 20 is laminated on a compound semiconductor (n-GaAs) 10 by epitaxial growth, and a barrier layer 30 by a tungsten nitride (high melting point metallic nitride) is formed on it by sputtering. And patterning of electrodes on the tungsten nitride barrier layer 30 is performed by photoresist, and an unnecessary part of the tungsten nitride barrier layer 30 is removed by reactive ion etching (RIE). Besides, on the layer a metal layer 40 composed of a Ti layer 41, a Pt layer 42, and an Au layer 43 and being an electrode of ohmic contact is formed by lift-off. Incidentally, a molybdenum nitride and a titanium nitride can be used in place of the tungsten nitride.

Inventors:

YAKURA MOTOTSUGU
KOMINAMI MASANORI
KINOSADA TOSHIAKI
YOSHIKAWA MITSUNORI
JIYON KEBIN TOWAINAMU

Application Number:

JP24939792A

Publication Date:

April 15, 1994

Filing Date:

September 18, 1992

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/28; H01L29/43; H01L29/45; (IPC1-7): H01L29/46

Attorney, Agent or Firm:

Kazuhide Okada

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