OVERCURRENT PROTECTING CIRCUIT OF GATE TURN-OFF THYRISTOR

Title:

OVERCURRENT PROTECTING CIRCUIT OF GATE TURN-OFF THYRISTOR

Document Type and Number:

Japanese Patent JPS6016171

Kind Code:

A

Abstract:

PURPOSE:To protect a GTO against an overcurrent by a small-sized and inexpensive circuit by detecting the overcurrent by the state of the anode voltage of the GTO and flowing an OFF gate current to the GTO to extinguish it. CONSTITUTION:The anode voltage of a GTO is raised when the GTO generates an overcurrent, and the state of the prescribed level or higher is continued. When in this state (overcurrent state), a diode D2 is reversely biased, and a capacitor C1 is charged continuously. Therefore, the voltage of the capacitor C1 is raised, and when it reaches the prescribed level, a Zener diode D1 is conducted, and a transistor Tr1 is turned ON. Thus, an OFF gate current is flowed, and the GTO is turned OFF.

Inventors:

YAGINUMA TAKAO
FUKUI HIROSHI
KIMURA ARATA

Application Number:

JP12335483A

Publication Date:

January 26, 1985

Filing Date:

July 08, 1983

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H02M1/06; (IPC1-7): H02M1/06

Attorney, Agent or Firm:

Katsuo Ogawa

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