Title:
MASK FOR X-RAY EXPOSURE
Document Type and Number:
Japanese Patent JPS6030138
Kind Code:
A
Abstract:
PURPOSE:To simplify a manufacturing process for an X-ray mask, to improve durability and to reduce manufacturing cost by using chromium as an X-ray absorption layer material formed on an X-ray transmitting substrate in a pattern shape. CONSTITUTION:An SiN film as an X-ray transmitting substrate 4 is formed on an Si substrate through a CVD method. A chromium film 5 is shaped on the SiN film 4 through an evaporation method, and a desired resist-pattern 6 is formed on the chromium film 5. The chromium film 5 is removed through ethcing while using the resist-pattern 6 as a mask. A reactive ion etching device is employed as a device and CCl4 as a gas at that time. The resist 6 is peeled by oxygen plasma, and the central section of the Si substrate 3 is removed through etching by a KOH solution.
Inventors:
SUZUKI YOSHIKI
Application Number:
JP13851683A
Publication Date:
February 15, 1985
Filing Date:
July 27, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G03F1/00; G03F1/68; G03F1/80; H01L21/027; H01L21/30; (IPC1-7): G03F1/00
Attorney, Agent or Firm:
Masuo Oiwa