PURPOSE: To cause a growth of a film with good quality at a high film growing speed, by a method wherein a third electrode is placed between two opposed electrodes and high frequency voltage is applied between two electrodes and voltage negative to reference potential to the third electrode.

CONSTITUTION: An upper electrode 11 and a lower electrode 12 are opposed apart in a reaction chamber 10 to be connected reference potential as well as third electrode 17 for placing a base plate heated by a heater 21 but insulated from the lower electrode 12 is provided on said lower electrode 12. In this condition, high frequency voltage is applied between the upper and the lower electrodes 11, 12 as well as voltage negative to reference potential to the third electrode 17. By this method, plasma can be concentrated to the vicinity of the base plate 21 and, therefore, a grown film having enhanced film quality is obtained at a high film growing speed.