Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS582036
Kind Code:
A
Abstract:
PURPOSE:To form Hg1-xCdxTe crystal on CdTe crystal at low cost, by sealing an Si substrate having a CdTe crystal layer and Hg1-xCdxTe in an ampule for heating. CONSTITUTION:The Si substrate 13 formed with the CdTe crystal layer 16 and Hg1-xCdxTe crystal chip 17 serving as source material are inserted into the quartz ampule 18 in opposed arrangement and for vacuum exhaust in the ampule later to weld the end part C of the ampule to seal. Thereafter, the ampule is inserted into a heating furnace for fixed time heating. The, Hg atoms invade into parts of space lattices in Cd atoms formed by the evaporation of a part of Cd atoms in the CdTe crystal layer to change the CdTe crystal layer into an Hg1-xCdxTe crystal layer.
Inventors:
YOSHIKAWA MITSUO
ITOU MICHIHARU
HAMASHIMA SHIGEKI
UEDA TOMOSHI
TAKIGAWA HIROSHI
ITOU MICHIHARU
HAMASHIMA SHIGEKI
UEDA TOMOSHI
TAKIGAWA HIROSHI
Application Number:
JP10033481A
Publication Date:
January 07, 1983
Filing Date:
June 26, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/0264; H01L21/36; H01L21/365; H01L21/368; H01L21/477; (IPC1-7): H01L21/368; H01L31/04
Attorney, Agent or Firm:
Sadaichi Igita
Next Patent: MOUNTING METHOD FOR IC AND THE LIKE