PURPOSE: To lower a temperature required for crystallization, and to shorten the time by forming a semiconductor device by utilizing an unsingle crystal silicon film in a region, to which indium is added and in which a crystal is grown.

CONSTITUTION: A foundation film 102 consisting of silicon oxide is formed onto a substrate 101. A mask 103 is formed, and a thin-film composed of indium is shaped selectively in a region 100. An intrinsic (an I-type) amorphous silicon film 104 is formed, and annealed for four hours and crystallized. Consequently, the amorphous silicon film is crystallized, thus obtaining a crystalline silicon film 104. A silicon oxide film 106 is formed as a gate insulating film. Impurities (phosphorus and boron) imparting one conductivity type are implanted into an active layer region. Accordingly, N-type impurity regions 114 and 116 and P-type impurity regions 111 and 113 are shaped, and the region of a P-channel TFT (PTFT) and the region an N-channel TFT (NTFT) can be formed. Annealing is conducted by the of laser beams.