PURPOSE: To obtain a flat surface conductor pattern free of hillocks by a method wherein a first film of Al or Al-Cu and then a second film of SiO or Y2O3 are successively laid down on a substrate by evaporation and the second film is etched with the intermediary of a resist pattern and the second film left after the etching is in turn used as a mask in a process for anodizing the exposed first film.

CONSTITUTION: An approx. 2,500 thick Al-Cu film 6 is provided by evaporation on a magnetic film 7 at 200°C and, in the same vacuum, a roughly 500 thick SiO film 5 is formed in succession. Next, a pattern is formed of an organic resist 8 on the film 5 and, with the resist 8 acting as a mask, exposed portion of the film 5 is removed by the ion milling or plasma etching method. After this, the remaining film 5 works as a mask in an anodizing process whereby the exposed part of the film 6 is changed into an Al2O3 film 9 with a swollen volume and with a surface flush with the surrounding film 5. The resist 8 which is made useless is removed, leaving behind a conductor pattern with a flat surface.