PURPOSE: To facilitate the writing of information and to enhance the manufacturing yield of a semiconductor device by arranging an energy beam shielding film which has an insulating film to cover fuse wirings and a hole at the top of the fuse wirings on the insulating film to cover the insulating film.

CONSTITUTION: A fuse wiring type semiconductor device is formed of a silicon substrate 11, fuse wirings 2, wiring connection pads 3a, 3b, an interlayer insulating film 4, a surface protecting insulating film 7, aluminum wirings 6a, 6b and an energy beam shielding film 9. the film 9 has a high reflectivity to the energy beam. A hole 10 is formed at the top of the wirings 2 and has a side length corresponding to the cutting length of the wirings 2. The energy beam is emitted via the hole 10 formed at the film 9 to the wirings 2, thereby cutting the wirings 2.