Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS5848937
Kind Code:
A
Abstract:
PURPOSE:To effectuate the drive capability of the buffer itself and to realize high speed signal transmission by providing the output terminals of buffer cell to the lattice points of the wiring layers of intermediate and upper layers and by using only the Al wirings of intermediate and upper layers between said output terminal and the input terminal of the load circuit cell, except for the area near the input terminal. CONSTITUTION:The three lines of poly-Si wirings 44 (for gate) are provided through the insulating film crossing the p layers 42, 42' of FET P1-P3 of buffer cell and the n layers 43, 43' for FET N1-N3 in the direction Y. The input wiring IN 47 of Al is provided one the intermediate layer and is connected to the wiring 44 through the through-holes 20-22, the power source VDD wiring 45 of aluminum is provided on the same layer and is connected to the p layer 42' through the through-holes 23, 24 and power source Vss wiring 46 of aluminum is provided on the intermediate layer and is connected to the n layer 43 through the through holes 25, 26, and the output wiring 48 of aluminum is connected to the n layer 43' through the through-holes 27-30. The output terminals 40 of buffer cell are located at the lattice points of intermediate and lower wiring layers and these are extended for external circuits through the poly-Si wiring 41 of lower layer and the through hole 32. The wiring 41 is connected to the input terminal (lattice point of lower and intermediate wiring layers) of load cell with a low resistance through the desired wiring layer. Therefore, signal propagation between particular circuit cells is enhanced and operation rate of IC can be raised.
Inventors:
SUMIMOTO TSUTOMU
KATOU MASAO
MASUDA KOUJI
KATOUNO SHINJI
MINAMI HIDEKAZU
KATOU MASAO
MASUDA KOUJI
KATOUNO SHINJI
MINAMI HIDEKAZU
Application Number:
JP14746781A
Publication Date:
March 23, 1983
Filing Date:
September 18, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/822; H01L21/3205; H01L21/82; H01L21/8234; H01L23/52; H01L27/04; H01L27/118; H01L29/423; (IPC1-7): H01L21/90; H01L27/04
Attorney, Agent or Firm:
Makoto Suzuki