HIGH ELECTRON MOBILITY TRANSISTOR - SUMITOMO ELECTRIC INDUSTRIES

Title:

HIGH ELECTRON MOBILITY TRANSISTOR

Document Type and Number:

Japanese Patent JPH0645367

Kind Code:

A

Abstract:

PURPOSE: To reduce change of a value of gm even if a part of two-dimensional electron transits to a layer of low electron mobility by making it get over it and move to a layer of high electron mobility.

CONSTITUTION: An n-type AlyGa1-yAs (0<y≤1) layer 3 doped with impurities, a non-doped InzGa1-zAs (0<z≤1) layer 4, and a cap layer 5 are laminated one by one. When a gate bias is distributed to the + side and a drain current is increased, even if a part of two-dimensional electron generated in an interface of a non-doped InzGa1-xAs layer 2 transits in a real space and bursts into the impurity doped AlyGa1-yAs layer 3, it falls into a non-doped InzGa1-zAs layer 4 which is formed immediately above impurity doped AlyGa1-yAs. Thereby, it is possible to prevented lowering of gm which is peculiar to an HEMT.

Inventors:

KUWATA NOBUCHIKA

Application Number:

JP19563192A

Publication Date:

February 18, 1994

Filing Date:

July 22, 1992

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES

International Classes:

H01L29/812; H01L21/338; H01L29/778; (IPC1-7): H01L21/338; H01L29/812

Attorney, Agent or Firm:

Hirokatsu Kamei (2 outside)

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