Title:
【発明の名称】微細パターン形成材料およびパターン形成方法
Document Type and Number:
Japanese Patent JP2737225
Kind Code:
B2
Abstract:
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): where R1, R2, R3 and R4 are each hydrogen or an alkyl group, a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.
Inventors:
HASHIMOTO KAZUHIKO
KAWAKITA KENJI
NOMURA NOBORU
KAWAKITA KENJI
NOMURA NOBORU
Application Number:
JP7531789A
Publication Date:
April 08, 1998
Filing Date:
March 27, 1989
Export Citation:
Assignee:
MATSUSHITA DENKI SANGYO KK
International Classes:
G03F7/004; G03F7/075; H01L21/027; H01L21/30; H01L21/3213; (IPC1-7): G03F7/075; G03F7/004; H01L21/027
Domestic Patent References:
| JP6456732A | ||||
| JP5849717A |
Attorney, Agent or Firm:
Tomoyuki Takimoto (1 person outside)