Title:
METHOD FOR PROCESSING OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS5939078
Kind Code:
A
Abstract:
PURPOSE:To form a spherical convex lens part on the surface of the semiconductor located directly below a mask forming region by a method wherein a circular mask is formed by coating on the surface of the light-emitting part of a light-emitting element using a material which will be gradually soaked into an etchant, and then a chemical etching is performed. CONSTITUTION:A P type GaAlAs layer 2 and a P type GaAlAs layer 3 is grown on an N type GaAlAs substrate 1, and an SiO2 film 4 is formed on the surface of said layer 3. Then a circular mask 5, consisting of a photoresist, is formed on the part which will be turned to the light injecting part on the surface of the substrate 1, and an etching is performed by soaking the above into the etching solution consisting of NaOH-H2O2. The mask 5 is etched slowly simultaneously with the etching performed on the surface of the substrate 1, and a spherical convex lens part 6 is completed on the part located below the region where the mask 5 was formed. Subsequently, a hole is provided at the prescribed part on the film 4, a P type electrode 7 is formed on the surface thereof and, at the same time, an N type electrode is formed on the surface of the substrate 1, excluding the lens part 6.
Inventors:
SATOU FUMIHIKO
TAKEUCHI TSUKASA
YAMASHITA SHIGEAKI
TAKEUCHI TSUKASA
YAMASHITA SHIGEAKI
Application Number:
JP14887582A
Publication Date:
March 03, 1984
Filing Date:
August 27, 1982
Export Citation:
Assignee:
OMRON TATEISI ELECTRONICS CO
International Classes:
H01L21/308; H01L33/14; H01L33/20; H01L33/30; H01L33/36; (IPC1-7): H01L21/306; H01L33/00
Attorney, Agent or Firm:
Shigenori Wada
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