Title:
REVERSE-STAGGERED THIN FILM TRANSISTOR AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH0653505
Kind Code:
A
Abstract:
PURPOSE: To eliminate leak between a gate thin film and a source thin film and between the gate thin film and a drain thin film.
CONSTITUTION: Since a TEOS-SiO2 film is excellent in step coverage, excellent step coverage can be achieved even if anodic oxidation of a gate thin film 2 causes a steep step at an end of a first gate insulation film 3 by forming a side wall 4 of TEOS-SiO2 film at the step formed at the end of the first gate insulation film 3.
Inventors:
ITOGA TAKASHI
AIDA HIROSHI
NAGAYASU TAKAYOSHI
AIDA HIROSHI
NAGAYASU TAKAYOSHI
Application Number:
JP20272392A
Publication Date:
February 25, 1994
Filing Date:
July 29, 1992
Export Citation:
Assignee:
SHARP KK
International Classes:
G02F1/13; G02F1/136; G02F1/1368; H01L29/78; H01L29/786; (IPC1-7): H01L29/784; G02F1/13; G02F1/136
Attorney, Agent or Firm:
Shusaku Yamamoto
Next Patent: THIN-FILM TRANSISTOR