PURPOSE: To provide a process for producing a single crystal of silicon which makes it possible to obtain the single crystal of silicon having a uniform oxygen concn. in an axial direction and is capable of reducing the incorporation of oxygen as compared with the conventional Czochralski method.

CONSTITUTION: A molding is immersed at least temporarily into a melt between the single crystal and the inside wall of a crucible during the pulling out of the single crystal and the single crystal having the decreased oxygen content as compared with the oxygen content of the signal crystal drawn out without the molding is drawn out.