Title:
【発明の名称】高電力ソリッドステートRF増幅器
Document Type and Number:
Japanese Patent JPH08501425
Kind Code:
A
Abstract:
Although known because of high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs of the type having coplanar leads having inductances on the order of between 8 nH and 15 nH are used in an RF amplifier. The individual devices operate on a high impedance load line to render the high inductance insignificant. The circuit configuration presents a high impedance to the output, eliminating the need for expensive combiners and low inductance packaging.
Inventors:
Hans Weedon
Paul, Lewis, Earl.
Thunder, Ravin Doran
Jones, Mark, Earl.
Lee, chin, chin
Paul, Lewis, Earl.
Thunder, Ravin Doran
Jones, Mark, Earl.
Lee, chin, chin
Application Number:
JP50829294A
Publication Date:
February 13, 1996
Filing Date:
September 15, 1993
Export Citation:
Assignee:
Analogic Corporation
International Classes:
H03F3/193; H03F3/21; H03F3/24; H03F3/68; H03F3/60; (IPC1-7): H03F3/24; H03F3/68; H03F3/193
Domestic Patent References:
| JP1160714B |
Attorney, Agent or Firm:
Masao Okabe (9 others)