Title:
BURN-IN DEVICE FOR POWER MOSFET
Document Type and Number:
Japanese Patent JPH0689932
Kind Code:
A
Abstract:
PURPOSE: To lower the defective ratio of power MOSFETs in a burning-in process after an assembly process by removing MOSFETs having defective oxide films in the state of wafers or chips before the assembly process.
CONSTITUTION: Power MOSFET chips having defective oxide films are removed from a wafer 9 by respectively bringing sets of probe pins 10 for gate and probe pins 11 for source into contact with all power MOSFETs on the wafer 9 and simultaneously applying bias voltages across the gates and sources of all chips.
Inventors:
NAKANO TOSHIYA
Application Number:
JP24041192A
Publication Date:
March 29, 1994
Filing Date:
September 09, 1992
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R31/26; H01L21/326; H01L21/66; (IPC1-7): H01L21/66; G01R31/26; H01L21/326
Attorney, Agent or Firm:
Takada Mamoru
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