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Title:
MANUFACTURE OF PHOTOGRAPH USING SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPS5842230
Kind Code:
A
Abstract:
PURPOSE:To obtain a photograph having no discoloration or fade-out for a long period by a method wherein a negative plate is used as a mask after forming a uniform film on a semiconductor wafer and recessed sections are formed by selective etching. CONSTITUTION:A uniform film 2 is provided on a wafer 1 by a method such as thermal oxidization or vapor growth. Next, the film 2 is selectively etched and a negative plate such as an negative or positive film is used as a mask to obtain a picture on the wafer 1 and recessed sections 3 having stages in level are formed by a well-known photolithorgraphic technique. In this way, a reflection can be embodied concretely by interference colors by a difference in the reflectivity of the film 2 as the picture pattern formed on the wafer 1 has the recessed sections 3 with a difference in depth.

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Inventors:
IKEGAME MAMORU
SAGARA IWAO
HIROSE YOSHIYUKI
KUROISHI KENICHI
Application Number:
JP13977081A
Publication Date:
March 11, 1983
Filing Date:
September 07, 1981
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/30; G03C1/705; G03F1/88; H01L21/027; (IPC1-7): H01L21/30
Domestic Patent References:
JPS53101416A1978-09-04
JPS50105073A1975-08-19
JPS5167071A1976-06-10
JPS52125217A1977-10-20
Attorney, Agent or Firm:
Toshiaki Suzuki