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Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE CONVERTER
Document Type and Number:
Japanese Patent JPS5854676
Kind Code:
A
Abstract:

PURPOSE: To improve the characteristics of a semiconductor pressure converter by interposing an insulating film between the surface of a silicon substrate to be mounted with a diaphragm pressure sensitive element and a glass film, thereby improving the insulation and preventing the pinholes from producing.

CONSTITUTION: A mounting base 13 which bonds a diaphragm type pressure sensitive element 11 integrally formed wth a gauge resistance element 12 on the outer surface is formed to a silicon substrate 13A having thermal expansion coefficient equal to that of the element 11, and a dioxidized silicon film 14 is thermally oxidized integrally with the element bonding surface of the substrate 13A. Then, a borosilicate glass film 15 is laminated by a sputtering on the film, thereby forming the base 13. Then, the element 11 is anodically bonded to the base 13.


Inventors:
TAKAHASHI YUKIO
SHIMAZOE MICHITAKA
MATSUOKA YOSHITAKA
Application Number:
JP15219481A
Publication Date:
March 31, 1983
Filing Date:
September 28, 1981
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G01L9/04; G01L9/00; H01L29/84; (IPC1-7): G01L9/04
Attorney, Agent or Firm:
Akio Takahashi