Title:
LOW NOISE HIGH SENSITIVITY CHARGE DETECTING AMPLIFIER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0832050
Kind Code:
A
Abstract:
PURPOSE: To simplify low-noise and signal treatment and to provide a charge detection amplifier of a small-sized structure by leaving no charge in a charge detection well after reset. CONSTITUTION: A charge detection amplifier 32 sensing a charge level inside a charge storing well, a charge sensor 32, a charge drain 28 neighboring to a charge-storing well and a charge transfer structure transferring charge from the charge storing well to the charge drain 28. At the time of reset, a potential level of the charge storing of the charge-storing well is changed, electrons pass to a vertual well from this well and then inside the charge drain 28 in order to be removed here. After the charge is transferred to the charge drain or the next CCD step, there is no remaining charge in the charge storing well so that the charge is completely removed from this structure.
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Inventors:
YAROSURAFU HAINESEKU
Application Number:
JP18421794A
Publication Date:
February 02, 1996
Filing Date:
July 01, 1994
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L29/762; H01L21/339; H04N5/335; H04N5/341; H04N5/355; H04N5/357; H04N5/369; H04N5/372; H04N5/374; H04N5/378; (IPC1-7): H01L29/762; H01L21/339; H04N5/335
Attorney, Agent or Firm:
Akira Asamura (3 outside)
Next Patent: SEMICONDUCTOR DEVICE