Title:
LIQUID EPITAXIAL GROWING METHOD
Document Type and Number:
Japanese Patent JPS5823435
Kind Code:
A
Abstract:
PURPOSE:To form a homogenous epitaxial layer by evenly adding a dopant gas over all stages, by using a boat in a multi-staged structure. CONSTITUTION:In the figure, 1 represents the upper stage boat and 2 the lower stage boat, both of which are formed into an integral body by a superposition jig 3. Sliders 7, 8 are formed of quartz in liquid reservoirs 11, 12 and other parts are formed of graphite. When doping a carbon impurity onto a GaP substrate 6, in case of the addition of the dopant gas (methane gas), the shortage of the dopant gas in the lower stage boat 2 is compensated with the gas produced by the reaction of a carrier gas (hydrogen gas) and the graphite in the upper stage boat 1. Thus, the addition amount of the dopant gas can be equalized over the entire boat, and a homogeneous eptiaxial layer is obtained resulting in the manufacture of an element with a stable characteristic.
Inventors:
IDEI YASUO
Application Number:
JP12268181A
Publication Date:
February 12, 1983
Filing Date:
August 05, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Takehiko Suzue