Title:
SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0669595
Kind Code:
A
Abstract:
PURPOSE: To diffuse Zn in a clad layer, etc., even if Zn-doped p-type GaAs substrate is used in a semiconductor laser and a method for manufacturing the same in which the substrate is used to be formed.
CONSTITUTION: A mesa-shaped carbon-doped AlGaAs layer 4 doped with carbon is formed on a Zn-doped p-type GaAs substrate 2. A current block layer 6 is so formed as to bury the mesa while having an inclination falling smoothly from an end of the mesa. A lower clad layer 8 doped with Zn is formed on the mesa of the layers 6, 4. An active layer 10 is formed on the layer 8. An upper clad layer 12 is formed on the layer 10.
Inventors:
FUKUSHIMA TAKEHIRO
KONDO MASATO
KONDO MASATO
Application Number:
JP22285592A
Publication Date:
March 11, 1994
Filing Date:
August 21, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Kitano Yoshito