Title:
THIN FILM FORMATION
Document Type and Number:
Japanese Patent JPS582022
Kind Code:
A
Abstract:
PURPOSE:To combine a thin film forming and vacuum deposition techniques utilizing ion beams to obtain a thin film of high purity substance, by irradiating only required ion sources of accelerated ions onto a substrate with the vapor of evaporation metal irradiated onto the substrate. CONSTITUTION:Gas such as N is introduced through a leakage valve 1 into the ion source 2 for ionization here later to be accelerated in an accelerator 3 passing through an analysing magnet 4 to electrically select only desired ion sources supplied to a reaction chamber 5. Selected ions supplied to the reaction chamber 5 kept at high vacuum are irradiated onto an irradiation plane of the substrate 6 installed in the reaction chamber to provide even ion currents. A metal deposition device is installed in the reaction chamber 5 to contain for example, a metal evaporat-deposited on an electron gun 7, which is irradiated onto the same substrate 5 for the irradiation of said ions for vacuum deposition. As for the ion-irradiation and metal vapor-irradiation, the two can be performed either simultaneously or alternately.
Inventors:
SATOU MAMORU
Application Number:
JP10030581A
Publication Date:
January 07, 1983
Filing Date:
June 27, 1981
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
C23C14/06; C23C14/22; H01L21/203; H01L21/31; (IPC1-7): C23C13/00; H01L21/26; H01L21/31
Attorney, Agent or Firm:
Director, Osaka Institute of Industrial Technology, AIST
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