PURPOSE: To generate a uniform, stable, high density plasma over the surface of a workpiece and enable the control of the density to a specified value by exciting helicon waves, in a plasma processing chamber, in an electric field close to the electric field mode with respect to the direction of the DC magnetic field generated by an electric field generating means.
CONSTITUTION: A ring-shaped loop antenna LA is installed around a cylindrical plasma generation chamber 10 the interior of which is in vacuum. Of two high- frequency signal voltages having a phase difference , virtually equal to π/2, the first signal voltage V1 is impressed by means of a power circuit 600, and an electric field E1 is thereby generated which rotates on a plane parallel with the bottom face of the plasma generation chamber 10 with its angle varying. The second signal voltage V2 is impressed, and an electric field E2 is thereby generated radially. A solenoid coil 21 for generating a magnetic field is installed around the loop antenna LA, and a DC electric field B is generated toward a workpiece 300. This enables uniform and high density plasma irradiation throughout the surface of the workpiece 300.
| JPH05102166 | SEMICONDUCTOR MANUFACTURING APPARATUS |
| JPH08293499 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| JPH0582479 | FOCUSSED ION BEAM DEVICE |
KONDO KAZUYOSHI
TANIGUCHI MICHIO
