Title:
【発明の名称】正温度係数抵抗器と一体化したMOSFET装置
Document Type and Number:
Japanese Patent JP2002522924
Kind Code:
A
Abstract:
The present invention sets forth a new device comprising a PTC, and a transistor in direct physical contact with the PTC. The PTC has a first surface and a second surface wherein at least one of the surfaces is substantially flat. Preferably, the transistor comprises a MOSFET coupled to and located on a flat surface of one of the first and second surfaces of the PTC. The device further includes insulating material coupled to the PTC, a conductive pad coupled to the insulating material, and a conductor coupled between the conductive pad and a gate junction of the transistor. A similar conductive pad and conductor arrangement is provided for a source junction of the transistor. The MOSFET is coupled at a drain junction thereof to one of the first and second surfaces of the PTC, and the device includes a non-conductive encapsulating material around at least a portion of the transistor and the PTC. The combined PTC/MOSFET device provides switching and overload protection features. Alternative embodiments set forth multi-transistor arrangements with a PTC.
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Inventors:
Dorty, Thomas Jay.
Application Number:
JP2000565567A
Publication Date:
July 23, 2002
Filing Date:
August 05, 1999
Export Citation:
Assignee:
Johnson Controls Technology Company
International Classes:
H01L25/18; H01L23/34; H01L23/58; H01L23/64; H01L25/04; H03K17/082; H02H9/02; H03K17/08; (IPC1-7): H01L23/58; H01L25/04; H01L25/18
Domestic Patent References:
| JPH09163592A | 1997-06-20 | |||
| JPH0738013A | 1995-02-07 |
Attorney, Agent or Firm:
Takao Kawasaki