PURPOSE: To retain the high-speed operation property of a MOS transistor, and improve the flattening of the whole substrate and the accuracy in processing when constituting a BiCMOS type of LSI by forming the MOS transistor and a bipolar transistor on a film SOI.
CONSTITUTION: An oxide film 2 and a silicon film 3 are formed on a silicon substrate 1, and the n-type diffusion layer 22 of the silicon film constitutes the collector region of a bipolar transistor, and a collector lead electrode is constituted of an n+-type diffusion layer 21 surrounding this and a polycide film 23 on it, and a p-type base region 25 to contact with the collector region is made inside the opening of the oxide film 24 on the collector region, and an n-type emitter region to contact with the base region is made inside the opening of the oxide film 26 on the base region. Hereby, the bipolar transistor is made of a film as thick as the MOS transistor, and the flattening between both is achieved.
TANBA NOBUO
HIRAMOTO TOSHIRO
ODAKA MASANORI
IKEDA TAKAHIDE
