PURPOSE: To obtain a diamond particle or thin film having high crystal orientation by treating the surface of a single crystal substrate with a carbon- containing plasma to form a barrier for preventing the diffusion of carbon component, forming high-density nuclei and carrying out chemical vapor deposition with microwave plasma.
CONSTITUTION: A cleaned single crystal substrate 11 is left standing in a high vacuum of ≤10-6Torr at room temperature to 800°C for ≥15min to release the gas molecules adsorbed to the surface of the substrate 11. The surface of the substrate 11 is treated with a carbon-containing plasma 13 composed of a reaction gas selected from hydrogen, oxygen, chlorine and fluorine and optionally incorporated with an inert gas selected from helium, neon and argon. A barrier to prevent the diffusion of carbon component into the substrate 11 is formed by this process. An electric current 14 is passed between the substrate 11 and the plasma 13 to form diamond crystal nuclei in high density and a highly oriented diamond particle or thin film is formed on the substrate.
HAYASHI KAZUYUKI
NAKAMURA RIE
SAITOU KIMITSUGU
NISHIMURA KOZO
