Title:
【発明の名称】磁界センサ
Document Type and Number:
Japanese Patent JP2781021
Kind Code:
B2
Abstract:
A magnetodiode (30) for use in a magnetic sensor using a semi-conductive element (52) (advantageously formed from a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by an n-i-p-i doping profile or superstructure. Such a superlattice is used to provide a region of long recombination times for the normal flow of charge carriers from which the carriers are deflected into regions (54) of short recombination times by a magnetic field being sensed.
Inventors:
Dale Lee Party
Joseph Pierre Eleman
Joseph Pierre Eleman
Application Number:
JP23135989A
Publication Date:
July 30, 1998
Filing Date:
September 06, 1989
Export Citation:
Assignee:
General Motors Corporation
International Classes:
G01R33/09; H01L27/08; H01L29/15; H01L29/82; H01L43/08; (IPC1-7): H01L43/08; G01R33/09
Domestic Patent References:
| JPS57124469A |
Attorney, Agent or Firm:
Jun Tsuda (3 others)