【発明の名称】量子井戸層の形成法

Japanese Patent JP2949298

B2

PURPOSE:To provide a quantum well and a semiconductor layer of predetermined compositions with ease and good controllability by forming a first semiconductor layer, and diffusing elements, contained in a fourth semiconductor layer and being the same elements as in a third semiconductor layer, into the fourth semiconductor layer itself to form a second semiconductor layer. CONSTITUTION:A third semiconductor layer D is composed, as a well layer, of a binary or ternary compound semiconductor. A fourth semiconductor layer E is composed of a binary, ternary, or quaternary compound semiconductor having a different composition from that of the former compound semiconductor. These layers U and E are laminated on a semiconductor substrate S to form a starting well layer U. The starting layer U is heat-treated to diffuse elements, contained in a third semiconductor layer D and being the same elements as in a fourth semiconductor layer E, into the third semiconductor layer itself to form a first semiconductor layer A, and also to diffuse elements, contained in the fourth semiconductor layer E and being the same elements as in the third semiconductor layer E, into the fourth semiconductor layer itself.

MYAZAWA TAKEO
WAKITA KOICHI
IWAMURA HIDETOSHI
NAGANUMA MITSURU

JP10598590A

September 13, 1999

April 20, 1990

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NIPPON DENSHIN DENWA KK

H01L29/06; H01L21/20; H01L29/20; H01L31/107; (IPC1-7): H01L31/107

JP6396970A
JP6396971A

Shoji Tanaka

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