Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0794514
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device having a construction capable of forming high reliability plated Au by a non-cyanogen process.
CONSTITUTION: This semiconductor device has a backing metal layer 4 for electrolytic plating formed on GaAs substrate 1, an Au thin film 4 which was formed on the backing metal layer 4 with the thickness removable by dry etching, and a plated Au layer 7 formed by electrolytic plating on the Au thin film 5.
More Like This:
| JPS5467766 | SEMICONDUCTOR DEVICE |
| JP2009105300 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| JPH02265243 | MULTILAYER WIRING AND ITS FORMATION |
Inventors:
HASHIMOTO TAKASHI
KITAURA YOSHIAKI
KITAURA YOSHIAKI
Application Number:
JP25530793A
Publication Date:
April 07, 1995
Filing Date:
September 20, 1993
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/3205; H01L21/60; H01L23/52; (IPC1-7): H01L21/3205
Attorney, Agent or Firm:
Takehiko Suzue
Next Patent: 複合重合体及び複合重合体組成物