Title:
【発明の名称】二次電子分光法の方法とシステム
Document Type and Number:
Japanese Patent JP2003500634
Kind Code:
A
Abstract:
A system and a method for fast characterization of sample's material composition, which is especially beneficial for semiconductor fabrication. The material composition is characterized by analyzing secondary electrons emission from the sample. According to one feature, electron detector is used to collect secondary electrons emanating from the sample. The detector is controlled to collect a specific narrow band of secondary electrons, and the band is controlled to allow for collection of SE at different energies. Two modes are disclosed: spot mode and secondary electron spectroscopy material imaging (SESMI). In the spot mode, a spectrum of SE is obtained from a single spot on the sample, and its characteristics are investigated to obtain information of the material composition of the spot. In the SESMI mode, an SEM image of an area on the sample is obtained. The SE spectrum at each pixel is investigated and correlated to a particular spectrum group. The image is then coded according to the SE spectrum grouping. The coding is preferably a color coding.
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Inventors:
Shachar, Dov
Dotan, Nome
Dotan, Nome
Application Number:
JP2000619004A
Publication Date:
January 07, 2003
Filing Date:
May 12, 2000
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
G01N23/225; G01Q30/02; H01J27/14; H01J37/244; H01J37/252; H01J37/256; H01L21/66; (IPC1-7): G01N23/225; H01J37/244; H01J37/252; H01L21/66
Domestic Patent References:
| JPS62168324A | 1987-07-24 | |||
| JPS62168324A | 1987-07-24 |
Foreign References:
| US5644132A | 1997-07-01 | |||
| US5644132A | 1997-07-01 |
Other References:
JPN6009068457, Ｄａｖｉｄ Ｊｏｙ，Ｎｅｅｒａｊ Ｋｈａｎｎａ、ａｎｄ Ｄａｖｉｄ Ｂｒａｓｋｉ, "ｓｅｃｏｎｄａｒｙ ｅｌｅｃｔｒｏｎ ｓｐｅｃｔｒｏｓｃｏｐｙ ｆｏｒ ｍｉｃｒｏａｎａｌｙｓｉｓ ａｎｄ ｄｅｆｅｃｔ ｒｅｖｉｅｗ", Ｐｒｏｃｅｅｄｉｎｇ ｏｆ ＳＰＩＥ， ｔｈｅ ＩｎｔｅｒｎａｔｉｏｎａｌＳｏｃｉｅｔｙ ｆｏｒ Ｏ, 199903, Ｖｏｌ．３６７７、ｐ．６２１−６２８, ｐ．６２７−６２８, US, ＳＰＩＥ
Attorney, Agent or Firm:
Yoshiki Hasegawa (2 outside)