Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0745697
Kind Code:
A
Abstract:
PURPOSE: To prevent narrowing of a width of a channel region, to allow a narrowing effect to hardly occur even if a channel width of a MOS transistor is narrowed, to suppress a rise of a threshold voltage, to improve reliability, to miniaturize an element and to accelerate its processing.
CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of laminating a first silicon oxide film 14 on a silicon nitride film 13 formed on a semiconductor substrate 11, etching the films 13, 14 to form a desired pattern 15, entirely laminating a second silicon oxide film 16, and finally anisotropically etching to form a sidewall spacer 16a, and then ion implanting it.
Inventors:
HIROTA YOSHIHIRO
Application Number:
JP19025293A
Publication Date:
February 14, 1995
Filing Date:
July 30, 1993
Export Citation:
Assignee:
SUMITOMO METAL IND
International Classes:
H01L21/76; H01L29/78; (IPC1-7): H01L21/76; H01L29/78
Attorney, Agent or Firm:
Ryuji Inouchi
Next Patent: 粒状ナゲツト装入装置