PURPOSE: To generate high density plasma and to efficiently perform a plasma treatment by arranging a pair of electrodes in a treatment room housing a treatment gas having prescribed pressure and applying the same RF voltage of a specific frequency to both electrodes.
CONSTITUTION: The treating gas is supplied into the treatment room 1 at the inside for which a pair of the electrodes 2, 3 are arranged and the treating gas is reduced and discharged in the pressure to a prescribed level. Thereafter, the high frequency voltage is applied to the electrodes 2, 3. Treatments, such as etching are performed by the plasma generated by such constitution. The RF voltage of a frequency of 100kHz to 1MHz is applied to both electrodes 2, 3 from a high frequency power source 4 and a low frequency power source 7 in the plasma treating device. At this time, after the etching treatment is performed by applying the high frequency voltage, the treating gases such as O2 is introduced into the treatment room 1 and the pressure in the room kept at ≤0.1Torr and the low frequency voltage, 100kHz for instance, is applied. Thus, hollow cathod electric discharge is generated between the electrodes and high density plasma is obtained, thereby accomplishing the plasma cleaning in a short time.
NAKATSUI FUJITSUGU
NAKAZATO NORIO
NAKADA HIROYUKI
| JPS61272928A | 1986-12-03 | |||
| JPS63221620A | 1988-09-14 | |||
| JPS61295381A | 1986-12-26 |