FORMING METHOD OF RESIST PATTERN AND FORMING METHOD OF METALLIC PATTERN USING AFOREMENTIONED FORMING METHOD

Title:

FORMING METHOD OF RESIST PATTERN AND FORMING METHOD OF METALLIC PATTERN USING AFOREMENTIONED FORMING METHOD

Document Type and Number:

Japanese Patent JPH0831733

Kind Code:

A

Abstract:

PURPOSE: To provide a photo-resist pattern suitable for forming an evaporation bump and a lift-off process utilizing the photo-resist pattern.

CONSTITUTION: An alkali-soluble high-molecular material is used for a lower layer, and a two-layer resist layer employing an alkali developing negative type photo-resist composition containing (A) (a) an unsaturated carboxylic acid, (b) a radical polymerizable compound having an epoxy group, (c) a copolymer with other radical polymerizable compounds, (B) a polymerizable compound having at least one ethylene unsaturated double bond, and (C) a photopolymerization initiator is used for an upper layer, thus forming a resist pattern. A metal is evaporated, and the residual resist layer is lifted off together with an unnecessary metallic layer on the resist layer, thus forming a metallic pattern.

Inventors:

CHIBA HIDEKI
OKUBO JUNICHI
NAITO MAKIKO
SHIODA ATSUSHI

Application Number:

JP18887794A

Publication Date:

February 02, 1996

Filing Date:

July 19, 1994

Export Citation:

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Assignee:

JAPAN SYNTHETIC RUBBER CO LTD

International Classes:

G03F7/26; H01L21/027; H01L21/321; H01L21/60; (IPC1-7): H01L21/027; G03F7/26; H01L21/321

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