Title:
【発明の名称】モノリシック集積装置
Document Type and Number:
Japanese Patent JP2000503762
Kind Code:
A
Abstract:
The monolithically integrated device according to this invention comprises a first substrate (SUB) and, at least in a portion: a) a first structure (ST1) of a first material in solid form suitable to absorb hydrogen with ensuing generation of thermal energy, superposed to said substrate (SUB); b) a second structure (ST2) of a second material in solid form suitable to release hydrogen when it reaches a temperature higher than a prefixed temperature, superposed to said substrate (SUB); c) a third structure (ST3) of a third material in solid form suitable to generate thermal energy when it is submitted to the passage of electric current, so placed as to be thermally coupled at least to said second structure (ST2); wherein said first structure (ST1) and said second structure (ST2) are in contact, at least partly, with one another.
Inventors:
Mastro Matteo, Ubaldo
Application Number:
JP52034397A
Publication Date:
March 28, 2000
Filing Date:
November 26, 1996
Export Citation:
Assignee:
SGS-Thomson Microelectronics Sochieta A Responsiver Limitator
International Classes:
G21B3/00; G21D9/00; H01L35/28; (IPC1-7): G21B1/00; H01L35/28
Attorney, Agent or Firm:
Soga Doteru (6 people outside)