Title:
【発明の名称】窒化物系半導体素子およびその製造方法
Document Type and Number:
Japanese Patent JP3384782
Kind Code:
B2
Inventors:
Koji Tominaga
Tatsuya Kunisato
Masayuki Hata
Tatsuya Kunisato
Masayuki Hata
Application Number:
JP2000074762A
Publication Date:
March 10, 2003
Filing Date:
March 16, 2000
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
C30B29/40; H01L21/205; H01L33/06; H01L33/12; H01L33/22; H01L33/32; H01L33/34; H01S5/323; H01S5/343; (IPC1-7): H01S5/343; C30B29/40; H01L21/205; H01L33/00
Domestic Patent References:
| JP2000353821A | ||||
| JP9293935A |
Attorney, Agent or Firm:
Yoshito Fukushima