PURPOSE: To produce a semiconductor coating film having high crystallinity and large area in high efficiency.

CONSTITUTION: A powdery silicon (Si) raw material 3 is supplied from a raw material feeding part 1 to a substrate 4 and introduced into a film-forming part 2 to heat and melt the Si raw material. A polycrystalline Si film (semiconductor coating film 30) is produced by cooling the molten Si raw material 3 under application of ultrasonic oscillation energy with an ultrasonic oscillator 25 attached to a guide plate 24. This process enables the formation of a uniform semiconductor coating film 30 on the substrate 4 and improves the crystallinity of the formed semiconductor coating film 30 even if the molten raw material films are sporadically distributed on the substrate 4 by the poor wettability of the substrate 4 and the Si raw material 3 because the raw material films are independently oscillated by the action of the ultrasonic oscillation energy.