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Title:
ION IMPLANTATION DEVICE
Document Type and Number:
Japanese Patent JPS5946749
Kind Code:
A
Abstract:

PURPOSE: To prevent any generation of defective goods which might be caused by mistakingly selecting the kind of ion by providing a means of measuring emissions developing between a mass spectrograph and an ion implantation chamber.

CONSTITUTION: After an ion beam 2 led out from an ion source 1 is divided according to the radio between mass and the charge by means of the magnetic field of a magnetic-field mass spectrograph 3, only those beams which pass through a mass-separating slit 4 among the divided beams enter into an implantation chamber 5 before being irradiated upon a wafer 6 installed in the implantation chamber 5. Such a device is provided with a means of measuring emissions developing between the mass spectrograph 3 and the implantation chamber 5, such as a viewing port 7 which transmits light discharged from the ion beam and a spectrometer 8. As a result, in performing implantation of P+ ion for example, any possibility of mistakingly selecting a different beam can be prevented by affirming the kind of ion by setting the spectrometer 8 to a line peculiar to P+ ion.


Inventors:
SAKUMICHI KUNIYUKI
OKADA OSAMI
NINOMIYA TAKESHI
SUZUKI KEIZOU
TOKIKUCHI KATSUMI
KOIKE HIDEKI
Application Number:
JP15591982A
Publication Date:
March 16, 1984
Filing Date:
September 09, 1982
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01J37/317; H01L21/265; (IPC1-7): H01L21/265
Attorney, Agent or Firm:
Junnosuke Nakamura



 
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