PURPOSE: To obtain an interface having high electron moving degree in good reproducibility by growing a compound semiconductor crystal layer containing In and As on a semiconductor substrate, retaining the layer at a specific temperature, then growing a semiconductor crystal layer different from the crystal layer.

CONSTITUTION: A compound semiconductor crystal layer containing In and As is grown on a semiconductor substrate subjected to cleaning treatment, and then, the growth is temporally stopped and the substrate is heated to a temperature higher than a starting temperature of re-evaporation of In and the temperature is retained. Then, a semiconductor crystal layer different from the compound semiconductor containing In and As is subjected to molecular epitaxial growth.