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Patent Searching and Data


Title:
NON-DESTRUCTIVE INSPECTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5946868
Kind Code:
A
Abstract:

PURPOSE: To make an inspection device small in size and compact in the stage of subjecting a semiconductor device wherein a semiconductor chip is sealed with an insulator from above the leads connected to the electrodes on the surface of said chip and part of the leads are exposed to the outside to a non- destructive inspection by putting the semiconductor device in a high frequency electromagnetic field and subjecting the same to the inspection.

CONSTITUTION: The entire part of a semiconductor device produced by bonding one end of a wire 3 of Au or Al to an electrode 2 consisting of Al formed on the surface of a semiconductor element 1, connecting the other end of the wire to an external lead 4 consisting of Cu, etc., sealing the surface thereof with a resin molded body 5, and exposing part of the lead 4 on the outside is exposed to a high frequency electromagnetic field in a high frequency current heater 6. Thermal impact is thus applied to the conductive parts such as the Al electrodes, Au wires, Cu leads, etc. and the junctures thereof, whereby the semiconductor device is inspected. The metallic parts of the electrodes, etc. sealed in the resin body are heated instantaneously without breaking down the resin body by making use of the high frequency current heating and the partial disconnection defect, etc. are discovered in a short time.


Inventors:
SUZUKI MASARU
KAWAI YOSHIAKI
Application Number:
JP15665982A
Publication Date:
March 16, 1984
Filing Date:
September 10, 1982
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G01R31/26; H01L21/66; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Toshiyuki Usuda