PURPOSE: To prevent deterioration of element characteristic such as leak current and noise resulting from crystal defect and to enhance yield in the manufacturing steps by comprising all crystal defects induced at the time of implanting impurity within the emitter region.
CONSTITUTION: The SiO2 film 32 is formed on the main surface of substrate 31 consisting of the N type semiconductor Si layer and an aperture 32a is formed. The BSG film 33 is laminated, then an aperture 33a is provided and a low temperature oxide film 34 is laminated. When both B and As ions are implanted and thermal processing is carried out, B is diffused from the ion implanted B, As and from the BSG film 33, and the emitter region 35, base region 37 and graft base region 38 since the diffusion coefficient of B is larger than that of As. As spreads wider in the emitter region that at the periphery of aperture 33a. However, ion implantation induces crystal defect region 36 only within the aperture 33a and such crystal defect regions induced by ion implantation are all comprised within the emitter region 35 since the diffusion coefficient of crystal defect is sufficiently smaller than that of As. Thereby, a bipolar transistor allowing existence of crystal defect by ion implantation within the emitter region can be easily obtained with less number of manufacturing steps.
YONEDA TADANAKA
FUJII EIZOU
SADAMATSU HIDEAKI
| JPS56142667A | 1981-11-07 | |||
| JPS5673447A | 1981-06-18 | |||
| JPS53123675A | 1978-10-28 |