Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS587837
Kind Code:
A
Abstract:
PURPOSE:To form a selective oxide film without bird beak by a method wherein after implanting boron ions into a fixed part of a poly Si film, the remnant poly Si film and a CVD oxide film thereunder are etched with a poly Si film containing boron as a mask, and finally applied to thermal oxidation. CONSTITUTION:After forming an oxide film 2 of 5,000Angstrom thick by thermal oxidation on an Si substrate 1, an oxide film 3 of 5,000Angstrom thick is adhered by CVD method. Next, the poly Si film 4 is formed with thickness approx. 3,000Angstrom . Further, a photo resist pattern 5 is formed on a part to serve as an element region, and boron ions are implanted with the pattern as a mask so as to pass through the poly Si film 4 resulting in the formation of an inversion preventing layer 6. Subsequently, boron ions are implanted into the poly Si film 4 resulting in the formation of a poly Si layer 7 containing boron. After etching-removing the poly Si layer 4 and oxide films 3, 2 thereunder with the poly Si layer 7 containing boron as a mask, heat treatment is applied, thus oxidizing the poly Si layer 7 containing boron. Then, the selective oxide film for element isolation without bird beak can be obtained.
Inventors:
MATSUNAGA JIYUNICHI
Application Number:
JP10499981A
Publication Date:
January 17, 1983
Filing Date:
July 07, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/76; H01L21/265; H01L21/306; H01L21/31; H01L21/762; (IPC1-7): H01L21/265; H01L21/306; H01L21/94
Attorney, Agent or Firm:
Noriyuki Noriyuki
Next Patent: DIGITAL MULTIMETER