Title:
【発明の名称】準粒子注入形トランジスタ
Document Type and Number:
Japanese Patent JPH08505737
Kind Code:
A
Abstract:
A quasi particle injection transistor is constituted of layers comprising an injector and one or several acceptors. The injector and all acceptors consist of a high temperature supraconductor. Each high temperature supraconductor in turn represents a crystalline stack of intrinsic tunnel contacts. Each tunnel contact results from an intrinsic property of the high temperature supraconductive crystal when the CuO2 planes or double planes are separated by insulating intermediate layers which may be used as tunnel barriers. The resulting 3-connection switching elements have a high amplification, so that a quasi particle injection transistor of the intrinsic type may drive a large number of further switching elements of the same type. On this basis highly integrated logical switching circuits made of high temperature supraconductors may be built.
Inventors:
Muller, Paul
Application Number:
JP51664994A
Publication Date:
June 18, 1996
Filing Date:
January 20, 1994
Export Citation:
Assignee:
Muller, Paul
International Classes:
H01L39/22; (IPC1-7): H01L39/22
Attorney, Agent or Firm:
Yasuo Ishikawa