Title:
【発明の名称】半導体処理の為の急熱炉
Document Type and Number:
Japanese Patent JPH0724257
Kind Code:
B2
Abstract:
A semiconductor wafer processing furnace includes an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis, and a wafer support assembly having a support member and associated translation elements for selectively translating the support member between the zones, along the first reference axis, in response to an applied position signal. Temperature elements control the first and second zones to have selected first and second temperatures, respectively. A controller applies the position signal to the translation elements, in response to an applied control signal representative of a desired temperature of the region surrounding the support member. Responsive to the position signal, the translation elements position the support member along the reference axis such that the temperature of the region surrounding the support member substantially matches the desired temperature.
Inventors:
Chun Shin Lee
Application Number:
JP6775489A
Publication Date:
March 15, 1995
Filing Date:
March 22, 1989
Export Citation:
Assignee:
High Temperacha Engineering Corporation
International Classes:
C30B31/10; H01L21/22; C30B31/12; F27B17/00; (IPC1-7): H01L21/22
Domestic Patent References:
| JPS5018470A | ||||
| JPS62293622A |
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)
Next Patent: CATALYTIC DENITRIZER